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Positron Lifetime in Si Multivacancies
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Frenkel Defects in Low Temperature e^-- Irradiated Ge and Si Investigated by X-Ray Diffraction
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On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.
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Defects in NTD MCZ Si Doped with Magnesium
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Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombarded Silicon
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Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy
p.1165

Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy
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A Positron Lifetime Study of Defects in Plastically Deformed Silicon
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Increase of Electrical Activity of Dislocations in Si during Plastic Deformation
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Irradiation Temperature Dependence of Residual...

Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombarded Silicon

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1159-1164

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1159

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Online since:

November 1995

Authors:

H. Amekura, N. Kishimoto, K. Kono, T. Saito

Keywords:

In Situ Measurement, In-Beam Annealing, MeV Ion, Photoconductivity, Proton, Radiation Damage, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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