Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombarded Silicon

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1159-1164

DOI:

10.4028/www.scientific.net/MSF.196-201.1159

Citation:

H. Amekura et al., "Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombarded Silicon", Materials Science Forum, Vols. 196-201, pp. 1159-1164, 1995

Online since:

November 1995

Export:

Price:

$35.00

In order to see related information, you need to Login.