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Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy
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Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy
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A Positron Lifetime Study of Defects in Plastically Deformed Silicon
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Increase of Electrical Activity of Dislocations in Si during Plastic Deformation
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Electronic States Associated with Straight Dislocations in P-Type SiliconStudied by Means of Electric-Dipole Spin Resonance
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Energy States of Deformation-Induced Dislocations in Silicon Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Extended Defect Formation in Silicon and Germanium...

Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1171-1176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1171

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Online since:

November 1995

Authors:

Shunsuke Muto, Seiji Takeda, Mitsuji Hirata

Keywords:

Deuteron, Extended Defects, Helium, Ion Implantation, TEM

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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