Materials Science Forum Vols. 196-201

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https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Table of Contents

Paper Title Page

Interstitial Hydrogen and the Dissociation of C-H Defects in GaAs

Authors: S.J. Breuer, R. Jones, Sven Öberg, Patrick R. Briddon

951

Hydrogen Induced Degradation in Heavily Carbon-Doped GaAs Diodes

Authors: Hiroshi Fushimi, Keiji Wada

957

Acceptor-Hydrogen Complexes in InAs

Authors: Doris Forkel-Wirth, N. Achtziger, A. Burchard, J.C. Correia, Manfred Deicher, Joachim Grillenberger, H. Gottschalck, T. Licht, R. Magerle, U. Reislöhner, M. Rüb, M. Toulemonde, W. Witthuhn

963

Vacancy- and Acceptor- H Complxes in Inp

Authors: C.P. Ewels, Sven Öberg, R. Jones, B. Pajot, Patrick R. Briddon

969

Investigation of the Manganese-Hydrogen Complex in Inp

Authors: B. Clerjaud, D. Côte, A. Lebkiri, A. Mari

975

First-Principles Calculation on Hydrogen Passivation Mechanism in Mg Doped GaN

Authors: Yoshihiro Okamoto, Mineo Saito, Atsushi Oshiyama

981

Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors

Authors: A. Burchard, Manfred Deicher, Doris Forkel-Wirth, J. Freidinger, T. Kerle, R. Magerle, Wulf Pfeiffer, W. Prost, Peter J. Wellmann, Albrecht Winnacker

987

Upconversion Induced by Deep Defects in GaAs

Authors: Takayuki Iino, Joerg Weber

993

Negative Effective-U and positive Effective-U Nature of the Bistable Dangling-Bonds in a-Si, a-Si:H and c-Si Studied by ab Initio Molecular-Dynamics Simulation

Authors: Nozomi Orita, Takuya Matsunaga, Hiroshi Katayama-Yoshida

1001

New Bistable Oxygen-Related Complex in Silicon

Authors: Kh.A. Abdullin, B.N. Mukashev, Yu.V. Gorelkinskii

1007