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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Table of Contents

Paper Title Page

Ga-Vacancies and As_Ga-Antisites in Electron Irradiated GaAs

Authors: H. Hausmann, Peter Ehrhart

1255

Frenkel Pairs and P_In Antisites in Low Temperature Electron Irradiated InP

Authors: H. Hausmann, Peter Ehrhart

1261

Generation of Point Defects during Plastic Deformation of InP

Authors: H.S. Leipner, Reinhard Krause-Rehberg, Ch. Hübner

1267

Category II and Category III Defects in 200 KEV Fe Implanted InP

Authors: Cesare Frigeri

1273

Clustering Process of Point Defects in GaP Studied by Transmission Electron Microscopy

Authors: Y. Ohno, S. Takeda, Masako Hirata

1279

Hg Vacancies in Hg_1-xCd_xTe Studied by Positron Annihilation

Authors: Reinhard Krause-Rehberg, Th. Abgarjan, A. Polity, M. Neubert

1285

ESR Study of a-Ge_1-xN_x Prepared by Magnetron Sputtering

Authors: Haruo Yokomichi

1291

First Principles Investigation of Vacancy Oxygen Defects in Si

Authors: C.P. Ewels, R. Jones, Sven Öberg

1297

Oxygen Complexing with Group II Impurities in Silicon

Authors: S.E. Daly, E. McGlynn, M.O. Henry, J.D. Campion, K.G. McGuigan, M.C. DoCarmo, Maria Helena Nazaré

1303

Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers

Authors: S.A. McQuaid, R.C. Newman, Elias Muñoz Merino

1309