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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Paper Title Page

TDS and RB Studies of Ar Implanted to Si

Authors: R. Hanada, S. Saito, S. Nagata, S. Yamaguchi

1375

Reactions between Point Defects in Silicon Doped with Germanium

Authors: Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.V. Shumov, V.I. Yashnik

1381

Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si

Authors: Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.I. Yashnik

1385

Surface Recombination in Semiconductors

Authors: Jerzy M. Langer, W. Walukiewicz

1389

Reactivation Kinetics of Lithium-Passivated Acceptors inGaAs

Authors: K. Leosson, B.H. Yang, H.P. Gislason

1395

Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing

Authors: Keiji Wada, Hachiro Nakanishi, Lionel C. Kimerling

1401

Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect

Authors: Hachiro Nakanishi, Keiji Wada

1407

Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals

Authors: V.A. Bykov, N.I. Dolgikh, Valentin V. Emtsev, Eugene E. Haller, V.I. Hitko, L.M. Karpovich, V.F. Shoh, V.I. Utenko

1413

PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe ⁷⁷Br(⁷⁷Se)

Authors: M. Wehner, P. Friedsam, R. Vianden, S.G. Jahn, Doris Forkel-Wirth

1419

Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si

Authors: K. Karpierz, Masashi Suezawa, A. Wawro, Y. Nishina

1425