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Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing
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Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect
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Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals
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PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe ⁷⁷Br(⁷⁷Se)
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Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si
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Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal
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Optically Induced Anneal of GaAs and AlGaAs Layers
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Electron-Irradiaton Induced Defects in Fe-Doped Semi-Insulating InP
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Deformation-Induced Defects in GaSb
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Scanning Tunneling Spectroscopic Studies of GaAs...

Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1425-1430

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1425

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Online since:

November 1995

Authors:

K. Karpierz, Masashi Suezawa, A. Wawro, Y. Nishina

Keywords:

GaAs, Shallow Acceptors, Shallow Donors, Si-Doping, STM Imaging

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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