Paper Titles

Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si
p.1425

Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal
p.1431

Optically Induced Anneal of GaAs and AlGaAs Layers
p.1437

Electron-Irradiaton Induced Defects in Fe-Doped Semi-Insulating InP
p.1443

Deformation-Induced Defects in GaSb
p.1449

Damages in AlGaAs/GaAs Heterostructures Induced by KeV-Electron-Beam Irradiation
p.1455

TEM Investigation of Point Defect Interactions in II-VI Compounds
p.1461

Athermal Motion of Donors under Ultrasound in CdS Crystals
p.1467

Chemical Identification on the Atomic Scale in MBE-Grown III-V Alloy Semiconductors
p.1471

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Deformation-Induced Defects in GaSb

Deformation-Induced Defects in GaSb

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1449-1454

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1449

Citation:

Cite this paper

Online since:

November 1995

Authors:

J. Mahony, G. Tessaro, Peter Mascher, H. Siethoff, H.-G. Brion

Keywords:

GaSb, Plastic Deformation, Positron Lifetime Spectroscopy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: