Paper Titles

Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals
p.1413

PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe ⁷⁷Br(⁷⁷Se)
p.1419

Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si
p.1425

Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal
p.1431

Optically Induced Anneal of GaAs and AlGaAs Layers
p.1437

Electron-Irradiaton Induced Defects in Fe-Doped Semi-Insulating InP
p.1443

Deformation-Induced Defects in GaSb
p.1449

Damages in AlGaAs/GaAs Heterostructures Induced by KeV-Electron-Beam Irradiation
p.1455

TEM Investigation of Point Defect Interactions in II-VI Compounds
p.1461

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Optically Induced Anneal of GaAs and AlGaAs Layers

Optically Induced Anneal of GaAs and AlGaAs Layers

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1437-1442

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1437

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Online since:

November 1995

Authors:

A.V. Abramov, N.G. Deryagin, A.G. Deryagin, V.I. Kuchinsciy, M.M. Sobolev, M.I. Papentsev

Keywords:

Defect, Recombination-Enhanced Diffusion

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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