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Surface Recombination in Semiconductors
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Reactivation Kinetics of Lithium-Passivated Acceptors inGaAs
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Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing
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Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect
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Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals
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PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe ⁷⁷Br(⁷⁷Se)
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Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si
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Optically Induced Anneal of GaAs and AlGaAs Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Impurity-Defect Complexes in Neutron Transmutation...

Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1413-1418

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1413

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Online since:

November 1995

Authors:

V.A. Bykov, N.I. Dolgikh, Valentin V. Emtsev, Eugene E. Haller, V.I. Hitko, L.M. Karpovich, V.F. Shoh, V.I. Utenko

Keywords:

Electrically Inactive Impurities, Metal Impurity, Neutron Transmutation Doping (NTD), Pairs and Complexes, Photoluminescence (PL), Radiation-Induced Defects

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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