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Perturbed Angular Correlation Study of Impurities Interaction in Si
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Reactions between Point Defects in Silicon Doped with Germanium
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Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si
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Surface Recombination in Semiconductors
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Reactivation Kinetics of Lithium-Passivated Acceptors inGaAs
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Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing
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Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect
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Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Surface Recombination in Semiconductors

Surface Recombination in Semiconductors

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1389-1394

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1389

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Online since:

November 1995

Authors:

Jerzy M. Langer, W. Walukiewicz

Keywords:

Defect, Minority Carrier Lifetime, Nonradiative Recombination

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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