Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1407-1412

DOI:

10.4028/www.scientific.net/MSF.196-201.1407

Citation:

H. Nakanishi and K. Wada, "Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect", Materials Science Forum, Vols. 196-201, pp. 1407-1412, 1995

Online since:

November 1995

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