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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Mechanism of Deep Penetration of Plasma-Induced...

Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1407-1412

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1407

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Online since:

November 1995

Authors:

Hachiro Nakanishi, Keiji Wada

Keywords:

Enhanced-Diffusion, GaAs, Minority Carrier Injection, Plasma, Point Defect

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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