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Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201PAC-Investigations of the Donor-Defect Interaction...

PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe ⁷⁷Br(⁷⁷Se)

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1419-1424

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1419

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Online since:

November 1995

Authors:

M. Wehner, P. Friedsam, R. Vianden, S.G. Jahn, Doris Forkel-Wirth

Keywords:

Br-Double Donor, GaAs, InAs, InP, Vacancy Interstitial Model

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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