Paper Titles

Reactions between Point Defects in Silicon Doped with Germanium
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Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si
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Surface Recombination in Semiconductors
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Reactivation Kinetics of Lithium-Passivated Acceptors inGaAs
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Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing
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Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect
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Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals
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PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe ⁷⁷Br(⁷⁷Se)
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Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Reactivation of Si Donors and Zn Acceptors in...

Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1401-1406

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1401

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Online since:

November 1995

Authors:

Keiji Wada, Hachiro Nakanishi, Lionel C. Kimerling

Keywords:

Charge State Effect, Plasma-Induced Point Defects, Reverse Bias Annealing

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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