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Reactions between Point Defects in Silicon Doped with Germanium

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1381-1384

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1381

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Online since:

November 1995

Authors:

Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.V. Shumov, V.I. Yashnik

Keywords:

Defects Formation, Germanium, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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