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Paper Titles
The Structure and Bonding of Iron-Acceptor Pairs in Silicon
p.1333
Ab Initio Study on Fe-Acceptor Pairing in Silicon
p.1339
Photo-Induced Iron Atom Motion of Iron-Acceptor Pairs in Silicon
p.1345
Recombination-Enhanced Migration of Interstitial Iron in Silicon
p.1351
The Origin of the Low-Spin Ground State for Trigonal Fei-AuSi and Fei-AgSi Pairs in Silicon
p.1357
The Atomic Stucture of Mn4 Clusters in Silicon
p.1363
Perturbed Angular Correlation Study of Impurities Interaction in Si
p.1369
TDS and RB Studies of Ar Implanted to Si
p.1375
Reactions between Point Defects in Silicon Doped with Germanium
p.1381

The Origin of the Low-Spin Ground State for Trigonal Fei-AuSi and Fei-AgSi Pairs in Silicon

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1357-1362

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1357

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Online since:

November 1995

Authors:

Harald Overhof, H. Weihrich

Keywords:

3d Transition Metal, Elemental Semiconductors, Pair Defect

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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