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TDS and RB Studies of Ar Implanted to Si

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1375-1380

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1375

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Online since:

November 1995

Authors:

R. Hanada, S. Saito, S. Nagata, S. Yamaguchi

Keywords:

Ar, Ar Diffusion in Si, Diffusion Activation Energy, Implantation, RBS, Silicon, TDS

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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