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Paper Titles
Photo-Induced Iron Atom Motion of Iron-Acceptor Pairs in Silicon
p.1345
Recombination-Enhanced Migration of Interstitial Iron in Silicon
p.1351
The Origin of the Low-Spin Ground State for Trigonal Fei-AuSi and Fei-AgSi Pairs in Silicon
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The Atomic Stucture of Mn4 Clusters in Silicon
p.1363
Perturbed Angular Correlation Study of Impurities Interaction in Si
p.1369
TDS and RB Studies of Ar Implanted to Si
p.1375
Reactions between Point Defects in Silicon Doped with Germanium
p.1381
Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si
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Surface Recombination in Semiconductors
p.1389

Perturbed Angular Correlation Study of Impurities Interaction in Si

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1369-1374

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1369

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Online since:

November 1995

Authors:

R. Hanada, T. Shinozuka, Masato Fujioka

Keywords:

111In, As, Fe, Impurities Pairing, Ion Implantation, PAC, Sb, Se, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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