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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Paper Title Page

The Chemical Identification of Defect Impurities Using Radioactive Isotopes

Authors: S.E. Daly, M.O. Henry, C.A. Frehill, Kristian Freitag, R. Vianden, G. Rohrlack, Doris Forkel-Wirth

1497

Radioactive Isotopes in Photoluminescence Experiemts: Identification of Defects Levels

Authors: R. Magerle, A. Burchard, T. Kerle, Wulf Pfeiffer, Manfred Deicher

1503

Electrical Detection of Electron Paramagnetic Resonance: Studies of the Mechanism of the Spin-Dependent Recombination Process

Authors: Siegmund Greulich-Weber, B. Stich, Johann Martin Spaeth

1509

The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si

Authors: A.-M. Van Bavel, S. Degroote, A. Vantomme, Andre Stesmans, G. Langouche

1515

Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V Semiconductors

Authors: Klaus Thonke, T. Baier, Joe Hamann, O. Scheerer, R. Sauer, W. Ulrici

1521

Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy

Authors: L. Wendeler, R. Sielemann, G. Weyer

1527

High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay

Authors: Gerd J. Norga, M.R. Black, K.A. Black, H. M'Saad, Jürgen Michel, Lionel C. Kimerling

1531

New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes

Authors: L.S. Vlasenko, M.P. Vlasenko

1537

Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields

Authors: S.D. Ganichev, B. Mayerhofer, I.N. Yassievich, J. Diener, W. Prettl

1543

Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon

Authors: K. Mizoguchi, Shinichi Nakashima, Hiroshi Harima, Tohru Hara

1547