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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201The Chemical Identification of Defect Impurities...

The Chemical Identification of Defect Impurities Using Radioactive Isotopes

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1497-1502

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1497

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Online since:

November 1995

Authors:

S.E. Daly, M.O. Henry, C.A. Frehill, Kristian Freitag, R. Vianden, G. Rohrlack, Doris Forkel-Wirth

Keywords:

GaAs, Photoluminescence (PL), Radioactive Isotopes, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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