The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1515-1520

DOI:

10.4028/www.scientific.net/MSF.196-201.1515

Citation:

A.-M. Van Bavel et al., "The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si", Materials Science Forum, Vols. 196-201, pp. 1515-1520, 1995

Online since:

November 1995

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$35.00

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