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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201The Bending of Si Crystals as a Means to Determine...

The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1515-1520

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1515

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Online since:

November 1995

Authors:

A.-M. Van Bavel, S. Degroote, A. Vantomme, Andre Stesmans, G. Langouche

Keywords:

Bending, Co Dimers, Electric Field Gradient, Orientation, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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