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The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
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Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V Semiconductors
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Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy
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High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay
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New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes
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Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields
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Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon
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Determination of High Relative Deep Level Concentrations in DLTS
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201High Sensitivity Detection of Silicon Surface...

High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1531-1536

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1531

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Online since:

November 1995

Authors:

Gerd J. Norga, M.R. Black, K.A. Black, H. M'Saad, Jürgen Michel, Lionel C. Kimerling

Keywords:

Halogen Adsorption, Metallic Contamination, Native Oxide Growth, Silicon, Surface Defect

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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