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Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy
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High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay
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New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes
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Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields
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Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon
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Determination of High Relative Deep Level Concentrations in DLTS
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Generation of Ultra-High Acceleration Field for New Extreme Condition Science
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Phonon Spectroscopy of Low-Energy Excitations of Defects in Semiconductors
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Local Vibrational Modes of 3d Elements in Wurtzite Type ZnO and GaN Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Raman Image Study of Defects in Ion-Implanted and...

Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1547-1552

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1547

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Online since:

November 1995

Authors:

K. Mizoguchi, Shinichi Nakashima, Hiroshi Harima, Tohru Hara

Keywords:

Depth Profile, Flash-Lamp Annealed Si, Raman Imaging

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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