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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201New Experimental Methods of Detection the...

New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1537-1542

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1537

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Online since:

November 1995

Authors:

L.S. Vlasenko, M.P. Vlasenko

Keywords:

P-N Junction, Spin Dependent Recombination, Triplet Centers

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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