New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1537-1542

DOI:

10.4028/www.scientific.net/MSF.196-201.1537

Citation:

L.S. Vlasenko and M.P. Vlasenko, "New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes", Materials Science Forum, Vols. 196-201, pp. 1537-1542, 1995

Online since:

November 1995

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$35.00

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