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New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes
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Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields
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Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon
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Determination of High Relative Deep Level Concentrations in DLTS
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Generation of Ultra-High Acceleration Field for New Extreme Condition Science
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Phonon Spectroscopy of Low-Energy Excitations of Defects in Semiconductors
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Local Vibrational Modes of 3d Elements in Wurtzite Type ZnO and GaN Crystals
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Anharmonicity of The C_AsLocal Oscillator in Gallium Arsenide
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Calculation of Local Vibrational Modes at Point Defects in Semiconductors
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Generation of Ultra-High Acceleration Field for...

Generation of Ultra-High Acceleration Field for New Extreme Condition Science

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1559-1562

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1559

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Cite this paper

Online since:

November 1995

Authors:

Tsutomu Mashimo, S. Okazaki

Keywords:

Extreme Conditions, Sedimentation of Atoms, Strong Acceleration Field, Ultracentrifuge

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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