Paper Titles

Radioactive Isotopes in Photoluminescence Experiemts: Identification of Defects Levels
p.1503

Electrical Detection of Electron Paramagnetic Resonance: Studies of the Mechanism of the Spin-Dependent Recombination Process
p.1509

The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
p.1515

Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V Semiconductors
p.1521

Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy
p.1527

High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay
p.1531

New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes
p.1537

Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields
p.1543

Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon
p.1547

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Frenkel Pairs in INSB Induced by Neutrino Recoil...

Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1527-1530

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1527

Citation:

Cite this paper

Online since:

November 1995

Authors:

L. Wendeler, R. Sielemann, G. Weyer

Keywords:

Frenkel Pairs, III-V Semiconductor, Intrinsic Defect, Mössbauer Effect

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: