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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201

Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

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Paper Title Page

Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion)

Authors: Takao Wada, Takashi Hagino, Hiroshi Fujimoto, Haruho Masuda

1613

Electron Energy Dependennce of Impurity Concentrations in Semiconductors by Electron Beam Doping (Superdiffusion)

Authors: Takao Wada, Kazuhiro Yasuda, Hiroshi Fujimoto, Haruho Masuda

1619

Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion)

Authors: Takao Wada, Hiroshi Fujimoto, Haruho Masuda

1625

Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation

Authors: Takahisa Okino, R. Takaue, M. Onishi

1631

Influence of Simultaneously Implanted As⁺ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon

Authors: Katsuhiro Yokota, T. Nakamura, Fumiyoshi Miyashita, K. Hirai, H. Takano, Mikito Kumagai, Yasuo Ando, Kouji Matsuda

1637

Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures

Authors: Nguyen Hong Ky

1643

Study of The Compensating Centres in GaAs:Te by Positron Annihilation

Authors: Reinhard Krause-Rehberg, G. Dlubek, A. Polity

1649

Time-of-Flight in Lithium-Compensated GaAS

Authors: S.Þ. Ingvarsson, H.P. Gislason

1655

The Influence of the Zinc Concentration on Defect Characteristics of InP

Authors: J. Mahony, Peter Mascher

1661

Influence of Intrinsic Defects on the Electronic Structure of Non-Stoichiometric CuInS₂ Chalcopyrite Semiconductors

Authors: Tetsuya Yamamoto, Hiroshi Katayama-Yoshida

1667