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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Study of The Compensating Centres in GaAs:Te by...

Study of The Compensating Centres in GaAs:Te by Positron Annihilation

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1649-1654

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1649

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Online since:

November 1995

Authors:

Reinhard Krause-Rehberg, G. Dlubek, A. Polity

Keywords:

Compensating Centres, GaAs, Positron Annihilation, Vacancy

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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