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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Defects in Porous Silicon: A Study with Optical...

Defects in Porous Silicon: A Study with Optical and Spin Resonance Methodes

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1673-1678

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1673

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Online since:

November 1995

Authors:

D.M. Hofmann, B.K. Meyer, P. Christmann, T. Wimbauer, W. Stadler, A. Nikolov, A. Scharmann, A. Hofstätter

Keywords:

Dangling Bond, Electron Paramagnetic Resonance (EPR), Hydrogen, Porous Si

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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