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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Oxygen Related Defect Centers: the Source of Room...

Oxygen Related Defect Centers: the Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1679-1682

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1679

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Online since:

November 1995

Authors:

S.M. Prokes, W.E. Carlos

Keywords:

Electron Spin Resonance, Non-Bridging Oxygen Hole Center, Photoluminescence (PL), Porous Silicon (PS)

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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