Paper Titles

Oxygen Related Defect Centers: the Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon
p.1679

Review of the Influence of Micro Crystal Defects in Silicon Single Crystals on Gate Oxide Integrity
p.1683

Fundamentals of Point Defect Aggregation and Dissolution Phenomena of Crystal Originated Defects in Czochralski Silicon
p.1691

Nature of D-Defect in CZ Silicon: D-Defect Dissolution and D-Defect Related T.D.D.B
p.1697

Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth
p.1707

Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals
p.1713

Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single Crystals
p.1719

Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers
p.1725

Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
p.1731

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Relationship between Grown-In Defects and Thermal...

Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1707-1712

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1707

Citation:

Cite this paper

Online since:

November 1995

Authors:

K. Takano, Kazuo Kitagawa, E. Lino, M. Kimura, H. Yamagishi

Keywords:

COP, FEMAG, FPD, LSTD, OPP, TZDB

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: