Paper Titles

Review of the Influence of Micro Crystal Defects in Silicon Single Crystals on Gate Oxide Integrity
p.1683

Fundamentals of Point Defect Aggregation and Dissolution Phenomena of Crystal Originated Defects in Czochralski Silicon
p.1691

Nature of D-Defect in CZ Silicon: D-Defect Dissolution and D-Defect Related T.D.D.B
p.1697

Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth
p.1707

Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals
p.1713

Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single Crystals
p.1719

Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers
p.1725

Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
p.1731

Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers
p.1737

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Growth Parameters Determining the Type of Grown-In...

Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1713-1718

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1713

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Online since:

November 1995

Authors:

M. Hourai, E. Kajita, T. Nagashima, H. Fujiwara, S. Umeno, S. Sadamitsu, Sakito Miki, T. Shigematsu

Keywords:

Axial Temperature Gradient, CZ-Si Crystal, Grown-in Defects, Growth Rate, OSF-Ring, Point Defect

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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