Paper Titles

Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth
p.1707

Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals
p.1713

Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single Crystals
p.1719

Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers
p.1725

Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
p.1731

Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers
p.1737

Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal
p.1743

Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si
p.1749

Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques
p.1755

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Influence of Point Defect Concentration in Growing...

Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1731-1736

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1731

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Online since:

November 1995

Authors:

T. Iwasaki, Hiroshi Harada, Hiroyo Haga

Keywords:

Agglomeration, Chemical Potential, Critical Temperature, Czochralski Silicon, Gate Oxide Integrity, Point Defect

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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