Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1731-1736

DOI:

10.4028/www.scientific.net/MSF.196-201.1731

Citation:

T. Iwasaki et al., "Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity", Materials Science Forum, Vols. 196-201, pp. 1731-1736, 1995

Online since:

November 1995

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