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Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers
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Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers
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Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal
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Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si
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Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques
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Microdefects in Nitrogen Doped FZ Silicon Revealed by Li⁺ Drifting
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Influence of Al Doping on Deep Levels in MBE GaAs
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Deep Donor - Acceptor Correlations in Low Temperature GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Photoluminescence Due To Oxygen Precipitates...

Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1749-1754

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1749

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Online since:

November 1995

Authors:

Michio Tajima, Masao Tokita, M. Warashina

Keywords:

Dislocation, Oxygen Precipitates, Photoluminescence (PL), Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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