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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Influence of Al Doping on Deep Levels in MBE GaAs

Influence of Al Doping on Deep Levels in MBE GaAs

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1767-1772

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1767

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Online since:

November 1995

Authors:

Umar S. Qurashi, M. Zafar Iqbal, N. Baber, T.G. Andersson

Keywords:

Al Doping, Deep Level, GaAs, MBE

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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