Paper Titles

Microdefects in Nitrogen Doped FZ Silicon Revealed by Li⁺ Drifting
p.1761

Influence of Al Doping on Deep Levels in MBE GaAs
p.1767

Deep Donor - Acceptor Correlations in Low Temperature GaAs
p.1773

Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell
p.1779

Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAs
p.1785

Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements
p.1791

Study of Gallium and Antimony Cluster Formation în GaSb Bulk Crystals Grown from Nonstoichiometric Melts
p.1797

TEM Evaluation of Ordered and Modulated Structures in MBE-Grown InAlAs Crystals on (110)InP
p.1801

SF₆/0₂ and CF₄/0₂ Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen
p.1807

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Spatial Distribution of Microdefects around...

Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1785-1790

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1785

Citation:

Cite this paper

Online since:

November 1995

Authors:

R. Toba, M. Warashina, Michio Tajima

Keywords:

Dislocation, GaAs, Microdefects, Photoetching, Photoluminescence (PL)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: