Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1791-1796

DOI:

10.4028/www.scientific.net/MSF.196-201.1791

Citation:

P. Martín et al., "Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements", Materials Science Forum, Vols. 196-201, pp. 1791-1796, 1995

Online since:

November 1995

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$35.00

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