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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Study of the Dislocation Atmospheres in N-Type...

Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1791-1796

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1791

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Online since:

November 1995

Authors:

P. Martín, J. Jiménez, Cesare Frigeri, J. Weyher, K. Sonnenberg

Keywords:

Dislocation, EBIC, MicroRaman, n-GaAs, Photoetching

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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