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TEM Evaluation of Ordered and Modulated Structures in MBE-Grown InAlAs Crystals on (110)InP
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Measurements of Polishing-Induced Residual Damages in Silicon Wafers Using Noncontact Photoconductivity Amplitude Technique
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Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201SF6/02 and CF4/02 Reactive-Ion-Etching-Induced...

SF₆/0₂ and CF₄/0₂ Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1807-1812

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1807

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Online since:

November 1995

Authors:

I.A. Buyanova, Anne Henry, Bo Monemar, J. Lennart Lindström, Moissei K. Sheinkman, G.S. Oehrlein

Keywords:

Defect, Photoluminescence (PL), Plasma Etching, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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