SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1807-1812

DOI:

10.4028/www.scientific.net/MSF.196-201.1807

Citation:

I.A. Buyanova et al., "SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen", Materials Science Forum, Vols. 196-201, pp. 1807-1812, 1995

Online since:

November 1995

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