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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Rhombic Aggregation of Dislocations in CZ-Si...

Rhombic Aggregation of Dislocations in CZ-Si Crystal

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1829-1834

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1829

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Online since:

November 1995

Authors:

K. Minowa, Seiichi Isomae, Michio Kitano

Keywords:

CZ-Si Crystal, Dislocation, Oxygen Precipitates, Thermal Stress

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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