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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Transmission Electron Microscopy of LatticeDefects...

Transmission Electron Microscopy of LatticeDefects in CZ-Silicon Wafer Formed by Two-Stage Annealing

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1823-1828

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1823

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Online since:

November 1995

Authors:

Shin Ishikawa, Mituyoshi Matsushita, Jun-ichi Shimomura

Keywords:

Czochralski Silicon, Lattice Defect, Oxygen Precipitation, TEM

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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