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Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers
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Transmission Electron Microscopy of LatticeDefects in CZ-Silicon Wafer Formed by Two-Stage Annealing
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Rhombic Aggregation of Dislocations in CZ-Si Crystal
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Study of Near-Surface Microdefects in Czochralski-Si Wafers After a CMOS Thermal Process
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Subsurface Damage in Single Diamond Tool Machined SI Wafers
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Interface Defects of Bonded Silicon Wafers
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Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices
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Oxygen Precipitation in CZ Silicon Crystals Contaminated with Iron
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Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-Ray Diffration
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Subsurface Damage in Single Diamond Tool Machined...

Subsurface Damage in Single Diamond Tool Machined SI Wafers

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Abstract:

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1841-1846

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1841

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Online since:

November 1995

Authors:

Teimuraz Mchedlidze, Ichiro Yonenaga, Koji Sumino

Keywords:

Ductile Mode Grinding, Surface Damage

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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