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Rhombic Aggregation of Dislocations in CZ-Si Crystal
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Study of Near-Surface Microdefects in Czochralski-Si Wafers After a CMOS Thermal Process
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Subsurface Damage in Single Diamond Tool Machined SI Wafers
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Study of Near-Surface Microdefects in...

Study of Near-Surface Microdefects in Czochralski-Si Wafers After a CMOS Thermal Process

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1835-1840

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1835

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Online since:

November 1995

Authors:

Y. Kitagawara, K. Aihara, S. Oka, Takao Takenaka

Keywords:

CMOS, CZ-Si, Grown-In, Microdefects, Near-Surface, OPP, Time-Dependent Dielectric Breakdown, TZDB

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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