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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Dislocation Reduction of GaAs and AIGaAs on Si...

Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1779-1784

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1779

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Online since:

November 1995

Authors:

T. Soga, M Yang, Tomohisa Kato, Takashi Jimbo, Masayoshi Umeno

Keywords:

AlGaAs-on-Si, Dislocation, GaAs-on-Si, Solar Cell

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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