Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1779-1784

DOI:

10.4028/www.scientific.net/MSF.196-201.1779

Citation:

T. Soga et al., "Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell", Materials Science Forum, Vols. 196-201, pp. 1779-1784, 1995

Online since:

November 1995

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$35.00

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