Paper Titles

Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
p.1731

Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers
p.1737

Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal
p.1743

Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si
p.1749

Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques
p.1755

Microdefects in Nitrogen Doped FZ Silicon Revealed by Li⁺ Drifting
p.1761

Influence of Al Doping on Deep Levels in MBE GaAs
p.1767

Deep Donor - Acceptor Correlations in Low Temperature GaAs
p.1773

Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell
p.1779

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Lattice Defects in High Quality As-Grown CZ...

Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1755-1760

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1755

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Online since:

November 1995

Authors:

Jan Vanhellemont, G. Kissinger, D. Gräf, Karine Kenis, M. Depas, Paul W. Mertens, U. Lambert, Marc Heyns, Cor Claeys, Hans Richter, P. Wagner

Keywords:

Defect Etching, Gate Oxide Integrity, Grown-in Defects, Ligth Scattering

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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