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Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si
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Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques
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Microdefects in Nitrogen Doped FZ Silicon Revealed by Li⁺ Drifting
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Influence of Al Doping on Deep Levels in MBE GaAs
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Deep Donor - Acceptor Correlations in Low Temperature GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Microdefects in Nitrogen Doped FZ Silicon Revealed...

Microdefects in Nitrogen Doped FZ Silicon Revealed by Li⁺ Drifting

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1761-1766

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1761

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Online since:

November 1995

Authors:

W.B. Knowlton, J.T. Walton, J.S. Lee, Y.K. Wong, Eugene E. Haller, Wilfried von Ammon, W. Zulehner

Keywords:

D Defects, FZ Silicon, Li Drifting, Microdefects, Nitrogen Doping

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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