Paper Titles

Electron Energy Dependennce of Impurity Concentrations in Semiconductors by Electron Beam Doping (Superdiffusion)
p.1619

Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion)
p.1625

Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation
p.1631

Influence of Simultaneously Implanted As⁺ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon
p.1637

Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
p.1643

Study of The Compensating Centres in GaAs:Te by Positron Annihilation
p.1649

Time-of-Flight in Lithium-Compensated GaAS
p.1655

The Influence of the Zinc Concentration on Defect Characteristics of InP
p.1661

Influence of Intrinsic Defects on the Electronic Structure of Non-Stoichiometric CuInS₂ Chalcopyrite Semiconductors
p.1667

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Effects of Background Doping Level on ZN Diffusion...

Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1643-1648

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1643

Citation:

Cite this paper

Online since:

November 1995

Authors:

Nguyen Hong Ky

Keywords:

Column-III Interstitials (I_III), Column-III vacancies(V_III, Impurity-Induced Disordering (IID), Multiple-Quantum-Well (MQW) Structure, Si-Doping Level, Zn Diffusion

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: