Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1643-1648

DOI:

10.4028/www.scientific.net/MSF.196-201.1643

Citation:

N. H. Ky "Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures", Materials Science Forum, Vols. 196-201, pp. 1643-1648, 1995

Online since:

November 1995

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