Paper Titles

Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion)
p.1613

Electron Energy Dependennce of Impurity Concentrations in Semiconductors by Electron Beam Doping (Superdiffusion)
p.1619

Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion)
p.1625

Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation
p.1631

Influence of Simultaneously Implanted As⁺ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon
p.1637

Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
p.1643

Study of The Compensating Centres in GaAs:Te by Positron Annihilation
p.1649

Time-of-Flight in Lithium-Compensated GaAS
p.1655

The Influence of the Zinc Concentration on Defect Characteristics of InP
p.1661

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Influence of Simultaneously Implanted As+ Ions on...

Influence of Simultaneously Implanted As⁺ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1637-1642

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1637

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Online since:

November 1995

Authors:

Katsuhiro Yokota, T. Nakamura, Fumiyoshi Miyashita, K. Hirai, H. Takano, Mikito Kumagai, Yasuo Ando, Kouji Matsuda

Keywords:

Activity, Diffusion, Impurity, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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