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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Interstitials in Silicon Produced by Electron Beam...

Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion)

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1613-1618

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1613

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Online since:

November 1995

Authors:

Takao Wada, Takashi Hagino, Hiroshi Fujimoto, Haruho Masuda

Keywords:

Electron Beam Doping, EPR, Interstitial, RBS

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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