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Anomalous Diffusion of Phosphorus in Silicon by Pair Diffusion Model and Decrease in Quasi Vacancy Formation Energy
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Enhanced Diffusion of Impurities into Solids by Electron Beam Doping
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Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion)
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Electric-Dipole Spin Resonance of Defects...

Electric-Dipole Spin Resonance of Defects Correlated with the Diffusion of ZN Into SI

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1601-1606

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1601

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Online since:

November 1995

Authors:

H. Schroth, R. App, A. Köpf, K. Lassmann, Hartmut Bracht, Nicolaas Stolwijk

Keywords:

Defect, Diffusion, EDSR, Si:Zn

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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