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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Anomalous Diffusion of Phosphorus in Silicon by...

Anomalous Diffusion of Phosphorus in Silicon by Pair Diffusion Model and Decrease in Quasi Vacancy Formation Energy

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1595-1600

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1595

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Online since:

November 1995

Authors:

M. Yoshida

Keywords:

Anomalous Diffusion, Binding Energy, Decrase in Quasi Vacancy Formation Energy, Pair Diffusion Model, Phosphorus, Plateau, Silicon, Tail

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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