Paper Titles

Phonon Spectroscopy of Low-Energy Excitations of Defects in Semiconductors
p.1563

Local Vibrational Modes of 3d Elements in Wurtzite Type ZnO and GaN Crystals
p.1571

Anharmonicity of The C_AsLocal Oscillator in Gallium Arsenide
p.1577

Calculation of Local Vibrational Modes at Point Defects in Semiconductors
p.1583

The Migration of Carbon and Self Interstitials in Silicon
p.1589

Anomalous Diffusion of Phosphorus in Silicon by Pair Diffusion Model and Decrease in Quasi Vacancy Formation Energy
p.1595

Electric-Dipole Spin Resonance of Defects Correlated with the Diffusion of ZN Into SI
p.1601

Enhanced Diffusion of Impurities into Solids by Electron Beam Doping
p.1607

Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion)
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201The Migration of Carbon and Self Interstitials in...

The Migration of Carbon and Self Interstitials in Silicon

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1589-1594

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1589

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Online since:

November 1995

Authors:

Bogusław Major

Keywords:

Carbon, Di-Carbon Centre, Migration, Self-Interstitial, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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